Resistive memory technologies are drawing attention as possible replacements for DRAM. Phase Change Memory (PCM) is one of such technologies. Its high densities, low idle power, and persistence also make PCM an attractive long-term replacement for DRAM. The main obstacles to PCM’s adoption for this purpose are high per-bit latency and power cost of writing data, and cell lifetimes. This project aims to overcome these obstacles and enable PCM as a DRAM replacement.