Resistive memory technologies are drawing attention as possible replacements for DRAM. Phase Change Memory (PCM) is one of such technologies. Its high densities, low idle power, and persistence also make PCM an attractive long-term replacement for DRAM. The main obstacles to PCM’s adoption for this purpose are high per-bit latency and power cost of writing data, and cell lifetimes. This project aims to overcome these obstacles and enable PCM as a DRAM replacement.
- Rodolfo Azevedo, John Davis, Karin Strauss, Parikshit Gopalan, Mark Manasse, and Sergey Yekhanin, Zombie Memory: Extending Memory Lifetime by Reviving Dead Blocks, in 40th International Symposium on Computer Architecture, ACM, 27 June 2013
- Tiejun Gao, Karin Strauss, Stephen M Blackburn, Kathryn McKinley, Doug Burger, and James Larus, Using Managed Runtime Systems to Tolerate Holes in Wearable Memories, in The ACM SIGPLAN Conference on Programming Language Design and Implementation, ACM, 18 June 2013
- Andrew Hay, Karin Strauss, Timothy Sherwood, Gabriel Loh, and Doug Burger, Preventing PCM Banks from Seizing Too Much Power, in MICRO-44 (International Symposium on Microarchitecture), ACM, December 2011
- Jeremy Condit, Edmund B. Nightingale, Christopher Frost, Engin Ipek, Doug Burger, Benjamin Lee, and Derrick Coetzee, Better I/O Through Byte-Addressable, Persistent Memory, in Symposium on Operating Systems Principles (SOSP '09), Association for Computing Machinery, Inc., October 2009
- Benjamin Lee, Engin Ipek, Onur Mutlu, and Doug Burger, Architecting Phase Change Memory as a Scalable DRAM Alternative, in International Symposium on Computer Architecture (ISCA), June 2009